http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006080128-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_df576b744cd75b364ccd4069242e1626 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2004-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_10b1d76707fa315227f45ebae86331a9 |
| publicationDate | 2006-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2006080128-A |
| titleOfInvention | Manufacturing method of semiconductor device |
| abstract | An object of the present invention is to provide a method of manufacturing a semiconductor device having a pretreatment process capable of obtaining a sufficient effect in a short time as a pretreatment for satisfactorily forming an insulating film on a base insulating film. In order to solve the above problem, when an insulating film is formed by CVD on a semiconductor substrate surface having a base insulating film formed on the entire surface, the surface layer of the base insulating film is coated with a fluorine-containing gas. Provided is a method for manufacturing a semiconductor device, characterized in that an insulating film is formed by a CVD method after etching with plasma and further irradiation with plasma of nitrogen gas or ammonia gas. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017059729-A |
| priorityDate | 2004-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.