| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-878
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-879
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-875 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01Q60-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11B9-1409
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y35-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01Q60-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01Q80-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R1-067 |
| filingDate |
2005-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_540335c1d97c9b227b48075c030ab01b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b92e3bf6a9ea4aaab6aacf210e51ab66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cfb7b6a4ea7d33b1b9c8d505e438e98b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51278d71276f1843869bbd112d36f486
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c00c78200a51d3cec021e6dcdcfcaea0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2de966d2bf3284e964b6ce300af1cef1 |
| publicationDate |
2006-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2006078485-A |
| titleOfInvention |
Semiconductor probe with resistive tip and method for manufacturing the same |
| abstract |
PROBLEM TO BE SOLVED: To provide a semiconductor probe in which a resistive tip is formed at an end of a cantilever without an alignment margin, and a manufacturing method thereof. A semi-square pyramid-shaped resistive chip 30 doped with a first impurity, a cantilever 41 on which the resistive chip 30 is located on a free end, and a first impurity at a tip of the resistive chip 30 The resistor region 36 is doped with a second impurity having a low polarity at a low concentration, and the second impurity is doped at a high concentration on the inclined surface of the resistive chip 30, and is formed apart from each other. The semiconductor probe includes a first electrode semiconductor region 32 and a second electrode semiconductor region 34 that are connected to each other. [Selection] Figure 2 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016105059-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7994499-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4564038-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008102128-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008089587-A |
| priorityDate |
2004-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |