http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006053204-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ad2cd796f8c4dcb425ddcc68707d3444 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-037 |
filingDate | 2004-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0d53319f1c44e8efc01787789a2cbc32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_703b3af0810da4c18e0ae43e4ecc45dd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_011f71ee5a6fea4f195e475afdfdd768 |
publicationDate | 2006-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2006053204-A |
titleOfInvention | Positive photosensitive resin composition |
abstract | PROBLEM TO BE SOLVED: To provide a positive photosensitive resin composition capable of giving a resin film having high exposure sensitivity, good pattern forming property and excellent heat resistance. The positive photosensitive resin composition of the present invention comprises a resin precursor selected from a polyimide precursor containing at least one of a carboxyl group and a phenolic hydroxyl group, and a polybenzoxazole precursor, and cholic acid or deoxy. It contains an acid derivative formed by p-nitroarylmethyl esterification of cholic acid or lithocholic acid, and a sensitizer. The resin formed using the positive photosensitive resin composition of the present invention can be used as a semiconductor protective film or an interlayer insulating film. [Selection figure] None |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7537715-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016039346-A |
priorityDate | 2004-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 143.