http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006052467-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_657f8fe5931a3364fda9ccca712ad398 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D13-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B41-009 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B41-89 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B41-52 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D5-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D7-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D13-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/F01D5-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/F02C7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D13-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D13-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C28-00 |
| filingDate | 2005-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f5d5ebe55d2508f6174c6d61021275a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_79aa4ffed9f9dfd56d02340d93345d57 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2f5c29f125cb4a006ff7be4d55aefa73 |
| publicationDate | 2006-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2006052467-A |
| titleOfInvention | Protective coating deposition method and composite article |
| abstract | A protective coating is effectively coated on a Si base substrate having a complicated shape that cannot be coated by a physical deposition method. [Solution] A conductive layer is deposited on a Si base substrate having a complicated shape such as an integral vane ring and a blade integral rotor by dissolution coating, chemical vapor deposition and physical vapor deposition, and then electrophoretic deposition (EPD). At least one barrier layer is deposited as a protective coating. An insulating layer may be applied between the substrate and the conductive layer by chemical vapor deposition. This insulating layer has the advantage of suppressing chemical reactions that can occur between the silicon of the silicon-based substrate and any layer such as the conductive layer and the bond coat deposited on the conductive layer. Prior to depositing the barrier layer, a bond coat may be deposited on the insulating layer by chemical vapor deposition and electrophoretic deposition. |
| priorityDate | 2004-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.