http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006049928-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09F9-30 |
| filingDate | 2005-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f128d9c2440afff71001e59f763b9ed http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 |
| publicationDate | 2006-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2006049928-A |
| titleOfInvention | Semiconductor device |
| abstract | A thin film transistor (TFT) having excellent characteristics and a semiconductor integrated circuit having the TFT are provided. In a semiconductor device including a peripheral circuit and an active matrix circuit, the peripheral circuit and the active matrix circuit include a first gate electrode and a second gate provided below a semiconductor layer with a first insulating film interposed therebetween. A plurality of thin film transistors including a second gate electrode provided on the semiconductor layer through an insulating film, wherein a crystalline semiconductor is used for a semiconductor layer of the thin film transistor of the peripheral circuit, and the semiconductor of the active matrix circuit An amorphous semiconductor is used for the layer. [Selection figure] None |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008020530-A |
| priorityDate | 2005-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.