http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006041465-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
| filingDate | 2005-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0de2919232ae9fcc83dca44db2bf18b3 |
| publicationDate | 2006-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2006041465-A |
| titleOfInvention | Thin film crystallization method, polycrystalline film, and thin film semiconductor device |
| abstract | PROBLEM TO BE SOLVED: To produce a high-performance thin film semiconductor device having a sufficiently high carrier mobility by forming a three-dimensionally oriented polycrystalline film. SOLUTION: (1) A polycrystalline film is formed on a substrate, and (2) a crystal grain in which the crystal orientation in the ion implantation direction is a channeling orientation by performing ion implantation from two different directions on the polycrystalline film. Only b is controlled in a three-dimensional manner, and the crystal lattice of the other crystal orientation is destroyed to form an amorphous region e. (3) Three-dimensionally by crystallizing the crystal grain b controlled three-dimensionally and the other amorphous film and crystallizing the crystal grain b controlled three-dimensionally as a seed A polycrystalline film composed only of controlled crystal grains can be formed. [Selection] Figure 5 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10249651-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012238851-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011096387-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9543145-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5480303-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9911767-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8901650-B2 |
| priorityDate | 2004-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 57.