http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006040925-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
filingDate 2004-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01ee9335a285e36fa16cc53db75a88de
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_148e60b192dbbebd8f37e2176eb96a6b
publicationDate 2006-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2006040925-A
titleOfInvention Etching method
abstract PROBLEM TO BE SOLVED: To perform etching stably without taking the above-mentioned measures, when etching anisotropically on silicon using a basic etching solution, the etching rate does not fluctuate even if the etching solution is repeatedly used. To provide a method that can An anisotropic etching of silicon is performed by using an etching apparatus having an etching tank into which a basic etching solution is introduced and repeatedly using a basic etching solution such as TMAH while staying in the apparatus. In the method of performing, when the concentration of carbonate ions contained in the initial basic etchant introduced into the etching apparatus is C 0 (mol / l), the carbonate ions contained in the basic etchant The concentration C (mol / l) is controlled within a range of C 0 ± 0.1 (mol / l) (where C is a real number of 0 or more), and the basic etching solution is placed in the etching apparatus for 72 hours or more. Let me stay. [Selection figure] None
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