http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006032924-A

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filingDate 2005-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90a374176e49b6949d98fca23538a820
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publicationDate 2006-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2006032924-A
titleOfInvention Method for manufacturing semiconductor device
abstract PROBLEM TO BE SOLVED: To control a crystal lateral growth position of a semiconductor film without making the apparatus complicated. A semiconductor film is formed on an insulating substrate, a reflective film made of an insulating film is formed on a part of the semiconductor film, and exposed by irradiating laser light using the reflective film as a mask. The semiconductor film is crystallized. In the structure of the invention described above, the reflective film has a structure in which insulating films having a high refractive index and insulating films having a low refractive index are alternately stacked. Specifically, it is characterized by comprising a silicon oxide film and a silicon nitride film formed on and in contact with the silicon oxide film. More preferably, a reflective film is formed by stacking several layers of a silicon oxide film and a silicon nitride film. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011151382-A
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priorityDate 2004-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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