http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006019016-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36d1d9c59848bff6ad5f55923d1290f5 |
classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-28 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C29-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C29-04 |
filingDate | 2005-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b8cd73ff4bf0cbabc8a5afd33d6c5a5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_47645a393b8762e3ad58e6a7b87fa2a6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b670e1b1f2cb294f20afdfaca5b3bd1 |
publicationDate | 2006-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2006019016-A |
titleOfInvention | Semiconductor memory device |
abstract | PROBLEM TO BE SOLVED: To provide a DRAM capable of accessing redundant rows and columns before replacement. A memory cell array, a redundant row memory cell array, a redundant column memory cell array, and a redundant column row memory cell array are provided. Redundant row test activation signal TEST1 and redundant column test activation signal / TEST2 are activated in response to control signals / RAS, / CAS, / WE and address key signals A1-A5. In the redundant row test mode, redundant word lines are selectively driven in response to row address signals RAs1 and RAs2. In the redundant column test mode, the redundant column selection line is selectively driven in response to the column address signals CAs1 and CAs2. [Selection] Figure 1 |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7940585-B2 |
priorityDate | 1995-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.