http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006005184-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
| filingDate | 2004-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ba0d572d4efb422146ee5d6fcf61641 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2eb46dbdbf799212d237276895b7aac1 |
| publicationDate | 2006-01-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2006005184-A |
| titleOfInvention | Semiconductor integrated circuit |
| abstract | PROBLEM TO BE SOLVED: To realize a semiconductor integrated circuit having a protection circuit that operates at a voltage lower than a reverse breakdown voltage of a protection diode. An N + drain layer D1 and an N + polycrystalline silicon film 16 are connected to the electrostatic protection circuit. The N + polycrystalline silicon film 16 is a gate, the N + drain layer D1 is a drain, and a first N well layer 11 is formed. A vertical trench MOS transistor TR1 having the source and first P-well layer 13 as a channel is provided. A capacitor C <b> 1 is provided between the N + polycrystalline silicon film 16 and the first P well layer 13, the first N well layer 11, and the P type silicon substrate 10. On the other hand, a diode Di 1 is provided between the P-type silicon substrate 10 and the second N well layer 12. [Selection] Figure 2 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007088346-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-6008054-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9412732-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2015053022-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2015053022-A1 |
| priorityDate | 2004-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.