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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20
filingDate 2004-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f24598839abe55a066e020800c5ca027
publicationDate 2006-01-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2006005022-A
titleOfInvention Imprint method and imprint apparatus
abstract PROBLEM TO BE SOLVED: To provide an imprint method and an imprint apparatus having productivity capable of dealing with nanoimprint lithography for forming a fine pattern of a semiconductor device on the order of several nanometers to several tens of nanometers. A shape of an entire curved surface portion of a predetermined angle range is projected outwardly from a cylindrical central axis of a surface portion on which a concavo-convex pattern of a mold member is formed, and is parallel to the central axis. The straight portion of the curved surface 135 is rotated along the substrate surface, and the substrate 110 is moved relative to the mold member 130 along the substrate surface, so that the UV curable property in the gap between the mold member 130 and the substrate 110 is obtained. The resin 120 is formed into a desired shape. [Selection] Figure 1
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