http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005522883-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-737 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 |
| filingDate | 2003-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2005-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2005522883-A |
| titleOfInvention | Bipolar transistor with graded base layer |
| abstract | [Expression 1] Semiconductor materials having a high carbon dopant concentration include gallium, indium, arsenic and nitrogen. The disclosed semiconductor material has a low sheet resistivity due to the high carbon dopant concentration obtained. The material can be the base layer of a heterojunction bipolar transistor on a gallium arsenide substrate and lattice matched to the gallium arsenide emitter and / or collector layer by controlling the concentration of indium and nitrogen in the base layer Can do. The base layer has a graded band gap formed by varying the flow rate during the deposition of the III and V additive elements used to reduce the band gap for different III-V elements representing the bulk of the layer. Can have. The flow rates of the III and V additive elements maintain an essentially constant doping-transfer product value during the deposition period to obtain a preselected base-emitter voltage at the junction in the formed transistor. Can be controlled. |
| priorityDate | 2002-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 46.