| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-44 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1651
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1605
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2002-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2005-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2005521238-A |
| titleOfInvention |
Method for defining the source and drain and the gap between them |
| abstract |
A method of making a thin film transistor source and drain is disclosed. The method includes the step (106) of forming a monolayer mask on the substrate. This mask is used for selective electroless plating of the metal layer (108). Therefore, the metal layer can be grown in a region where no monolayer exists. As a result, the grown metal layer can form a source and drain with a gap in between (a monolayer was preventing deposition in this gap). |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2037303-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012234923-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014103419-A |
| priorityDate |
2001-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |