http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005517087-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C22C21-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D11-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D11-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D11-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D11-16 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D11-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D11-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D11-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C22C21-00 |
| filingDate | 2003-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2005-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2005517087-A |
| titleOfInvention | Anodized halogen resistant aluminum for use in semiconductor processing equipment |
| abstract | The inventors maintain the content of mobile impurities and their compounds in the formation of particulate inclusions that prevent a smooth transition from the alloy surface to the overlying aluminum oxide protective film on the surface of the aluminum alloy article. It has been discovered that the aluminum alloy can be controlled by heat treating the aluminum alloy at a temperature below about 330 ° C. and producing an aluminum oxide protective thin film by using a specific electrolytic treatment. Taking these factors into account, an improved aluminum oxide protective film is obtained. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015196867-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012180592-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023033120-A1 |
| priorityDate | 2002-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 53.