| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02197
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-468
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31691 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K19-00 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C13-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 |
| filingDate |
2002-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2005-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2005510865-A |
| titleOfInvention |
Semiconductor arrangement including transistors and nonvolatile read / write memory cells based on organic semiconductors |
| abstract |
The present invention relates to semiconductor arrangements comprising transistors, semiconductor segments of transistors comprising organic semiconductors, and memory cells, preferably based on the ferroelectric effect of polymers, for use, for example, in RFID tags. The semiconductor arrangement according to the invention can be used in smart cards or tags and has at least one rewritable memory cell applied to a flexible substrate having a semiconductor path composed of at least one organic semiconductor. The rewritable memory cell is characterized by a ferroelectric effect in the memory material, the memory material is an organic polymer having ferroelectric properties, and the memory material is an inorganic polymer having ferroelectric properties. It is characterized by being. |
| priorityDate |
2001-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |