http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005505934-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76852 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5223 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-016 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B99-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 |
| filingDate | 2002-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2005-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2005505934-A |
| titleOfInvention | Metal-insulating film-metal (MIM) capacitor structure and manufacturing method thereof |
| abstract | Sidewall spacers extending along a channel defined between a pair of legs defining a portion of the MIM capacitor structure by a metal-insulator-metal (MIM) capacitor structure and a method of manufacturing the same in an integrated circuit Is used to increase the capacitance density of the MIM capacitor structure. Each of the legs includes a side surface facing the channel, with an upper electrode and a lower power, and an insulating layer interposed therebetween. The sidewall spacer includes a conductive layer and an insulating layer interposed between the conductive layer and one sidewall of the leg, and the conductive layer of the sidewall spacer is physically separated from the upper electrode of the MIM capacitor structure. Further, the lower electrode of the MIM capacitor structure may be ammonia plasma treated before depositing the insulating layer to reduce electrode oxidation. Further, a multi-rate etching process may be used to etch the top electrode and the insulating layer of the MIM structure, with a first faster rate being used to define the MIM structure top electrode and the insulating layer, respectively. After performing anisotropic etching to a point close to the interface between the conductive material and the dielectric material, a second slower rate is used to etch the etch stop layer defined on the bottom electrode of the MIM structure. Perform anisotropic etching to close points. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8178445-B2 |
| priorityDate | 2001-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.