http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005504418-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J29-327 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J9-227 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J9-2278 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J29-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J9-227 |
| filingDate | 2002-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2005-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2005504418-A |
| titleOfInvention | Method of manufacturing a matrix for a cathode ray tube |
| abstract | A method of manufacturing a light emitting screen assembly having a light absorbing matrix with a plurality of substantially equal sized openings provided on an inner surface of a cathode ray tube (CRT) front panel. The tube has a color selection electrode spaced from the inner surface of the front panel, the color selection electrode having a plurality of strands interleaved with slots. Such a method includes providing a first light-resistant layer whose solubility is changed when exposed to light such that a large dose of light reduces the solubility of the first light-resistant layer. The first light resistant layer is applied to the inner surface of the front panel. The first light-resistant layer is exposed to light from a light source positioned with respect to the central source position, as well as two symmetrical source positions with respect to the central source position. Selective exposure changes the solubility of the irradiated area of the first light-resistant layer so as to produce areas with greater solubility and inferior soluble areas in the irradiated area of the first light-resistant layer. . A large amount of the soluble area is substantially removed so as not to cover the area of the inner surface of the front panel, while retaining the inferior soluble area. The inner surface of the front panel and the retained area are then overcoated with a light absorbing material. Thereafter, the retained area of the first light-resistant layer and the light-absorbing material on the aforementioned area are removed, not covering the front panel portion, and defining a first guard band of light-absorbing material on the inner surface of the front panel. The photolithography process is repeated with the second light-resistant layer and the third light-resistant layer to define a second guard band of light-absorbing material and a third guard band of light-absorbing material, respectively. However, the positions of the light sources in the second light-resistant layer and the third light-resistant layer are arranged at asymmetric positions with respect to the central supply position. |
| priorityDate | 2001-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.