| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T117-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S117-904 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1281
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78675
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02683
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02691
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02422
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02595
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02488
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02678 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-268
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2005-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5843bf5ec047e399bb775c8468e6f08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_98063f993fdc2c3686bad769eee66f69
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4774fd1c590f6360e5388dc143ac2c5a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_39a7819c6e14136decaefe98eb7b76d6 |
| publicationDate |
2005-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2005354087-A |
| titleOfInvention |
Semiconductor device manufacturing method and semiconductor manufacturing apparatus |
| abstract |
When applied to system-on-glass, etc., the transistor characteristics of the TFT are homogenized at a high level, and a TFT that is excellent in mobility and capable of high-speed driving is realized particularly in the peripheral circuit region. SOLUTION: An a-Si film 2 is patterned on a glass substrate 1 into a linear shape (ribbon shape) (FIG. 1 (a)) or an island shape (island shape) (FIG. 1 (b)). The a-Si film 2 is crystallized by irradiating and scanning the surface of the film 2 or the back surface of the glass substrate 1 with an energy beam output continuously from the CW laser 3 with respect to time. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012044046-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018046140-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150143508-A |
| priorityDate |
2000-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |