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filingDate 2004-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e7d3c297b11dfd81d2f783f74cc61088
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publicationDate 2005-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2005353673-A
titleOfInvention Ferroelectric capacitor manufacturing method, ferroelectric memory manufacturing method, ferroelectric capacitor, and ferroelectric memory
abstract PROBLEM TO BE SOLVED: To provide a manufacturing method of a ferroelectric capacitor capable of compensating for a damaged portion formed when a ferroelectric layer is dry etched. A method of manufacturing a ferroelectric capacitor according to the present invention includes: (a) a ferroelectric multilayer body is formed by sequentially laminating a lower electrode layer, a ferroelectric layer, and an upper electrode layer above a substrate. A forming composition; (b) a patterning process by dry-etching at least the upper electrode layer and the ferroelectric layer; and (c) a coating composition comprising a compound having an element constituting the ferroelectric layer. And (d) applying heat treatment to the ferroelectric laminate to crystallize the coating composition applied to the side wall of the ferroelectric layer. And a step of performing. [Selection] Figure 1
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