| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36d1d9c59848bff6ad5f55923d1290f5 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-56 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-29
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-26 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 |
| filingDate |
2004-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e5a697c74496b682eac5b615607ae9de
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af86b7b6fbd5acfb58905a60a1994cf1 |
| publicationDate |
2005-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2005352180-A |
| titleOfInvention |
Manufacturing method of semiconductor device |
| abstract |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method for forming a desired pattern on a wafer by using a high-precision mask that can be manufactured by a simplified process. A groove pattern 5a having a relatively narrow width and a groove pattern 5b having a width wider than the groove pattern 5a are formed on a main surface of a quartz glass substrate 1, and the groove pattern 5b having a relatively wide width is formed in the groove pattern 5b. For example, a light shielding film 6 made of a resist film is formed. A specific method for manufacturing this mask is to perform patterning by applying a resist film on the quartz glass substrate 1 and then exposing and developing the resist film. Then, groove patterns 5a and 5b are formed on the quartz glass substrate 1 using the patterned resist film as a mask (dry etching). Subsequently, after removing the patterned resist film, a new resist film is applied. Then, the light shielding film 6 is formed only in the groove pattern 5b by patterning. [Selection] Figure 2 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2015029693-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2015029693-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016018139-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9927697-B2 |
| priorityDate |
2004-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |