http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005347764-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-268 |
| filingDate | 2005-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_558d93c84aa5b0b7229147f748bb1bb9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_142493b47a192b66c57a97cfc421e195 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_85ea15a53cd6d021bea71a8ce2c5ded1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3321b3ee589a1bfb7ee2336adf359bea http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c13cf82ea73ade8fd23a6dd7e2b7e2c6 |
| publicationDate | 2005-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2005347764-A |
| titleOfInvention | Manufacturing method of image display device |
| abstract | PROBLEM TO BE SOLVED: To provide a manufacturing method of an image display device provided with an active matrix substrate having a high performance thin film transistor circuit operating at a high speed mobility in a driving circuit for driving pixel portions arranged in a matrix. Irradiation while scanning a pulse modulated laser beam or pseudo CW laser beam on a polysilicon film formed in a drive circuit region DAR1 around a pixel region PAR of an active matrix substrate SUB1 constituting an image display device Then, a discontinuous modified region of the substantially band-like crystalline silicon film modified so as to have a continuous grain boundary in the scanning direction is formed. A drive circuit having an active element such as a thin film transistor is formed in the virtual tile TL formed in the discontinuous modified region so that the channel direction is substantially the crystal growth direction of the band-like crystalline silicon film. [Selection] FIG. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7619251-B2 |
| priorityDate | 2005-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.