http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005311083-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4edd4e526605dbd18b513b4b30d19ab2 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate | 2004-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f8c55a59efe80e3bdfccc2c5b9dd534f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7a3352491cf1ad0f993078e9eb05a790 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3eb8c7e33cbeb4addb71c6c08cb856d5 |
| publicationDate | 2005-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2005311083-A |
| titleOfInvention | Manufacturing method of semiconductor device |
| abstract | PROBLEM TO BE SOLVED: To suppress an electrolytic corrosion due to a photoelectric effect generated in a cleaning process after forming a metal film in a recess of an insulating film and to form a highly reliable metal film in the recess of the insulating film This manufacturing method is provided at low cost. A recess 7 is formed in an insulating film (SiOC film) 6, and a barrier metal film 8 and a copper film 9 serving as wiring are embedded in the recess 7. Next, after removing the excess copper film 9 and the barrier metal film 8 by using the CMP method, it is washed with a dilute aqueous ammonia solution and dried. Then, the copper film 9 is exposed to an oxygen atmosphere and oxidized to form a copper oxide 10 on the surface of the copper film 9. Then, it wash | cleans using the diluted oxalic acid aqueous solution. [Selection] Figure 5 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007311383-A |
| priorityDate | 2004-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.