| abstract |
PROBLEM TO BE SOLVED: To provide a thin film forming apparatus and a thin film forming method for densifying an insulating film at a relatively low temperature without oxidizing a base region. In a thin film forming apparatus 50, a reaction chamber 2, a stage 3, an infrared heating mechanism 11, a silane-based gas inlet 8a, and an oxidizing gas inlet are provided in order to accommodate a semiconductor substrate 7 and form a predetermined thin film. 9a, a silane-based gas supply source 8, an oxidizing gas supply source 9, an exhaust port 13, and a vacuum pump 15. Further, in order to perform oxygen radical treatment on the silicon oxide film formed on the semiconductor substrate 7, the microwave generation unit 5, the antenna unit 4, the argon gas inlet 10a, and the argon gas supply source 10 are provided, and argon plasma is generated. As a result, oxygen is excited and oxygen radicals are generated. [Selection] Figure 1 |