http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005302892-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2004-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_021837fa139b2c9cf020eb09f0354ce3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b2cdae79b75831a583642b9dbecf66e9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba38cf3fbbf2cc3e73e35c743df25d15 |
| publicationDate | 2005-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2005302892-A |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | PROBLEM TO BE SOLVED: To reduce the bonding amount of nitrogen and hydrogen in a silicon nitride film. SOLUTION: A film thickness is formed by catalytic CVD on a high-quality protective insulating film 8a having an intermediate thickness covering a silicon layer 4 of a MISFET, a silicide layer 7 on a source / drain diffusion layer 6 and a sidewall insulating film 5. A silicon nitride thin film layer 14 having a thickness of 1 nm to 5 nm is deposited, and then active species of nitrogen and hydrogen generated by a plasma excited or heated catalyst body, or active species in which nitrogen and hydrogen are combined such as NH and NH 2 , The active species 15 for dissociation are irradiated to the silicon nitride thin film layer 14 to dissociate the N—H bonds of the silicon nitride thin film layer 14 to release hydrogen, thereby reforming the high quality protective insulating layer 16. Then, the deposition of the silicon nitride thin film layer 14 and the hydrogen dissociation of the active species 15 for dissociation are repeated to form a high-quality protective insulating film 8 made of a silicon nitride film having a desired thickness. [Selection] Figure 5 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008098400-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006093242-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102903665-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101017758-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7767513-B2 |
| priorityDate | 2004-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.