| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7af673589ca45d2fd8b9ea902cdbd1dc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d79a3714d75520adeea100b7ed428a77 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0634
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0237
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2205 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate |
2004-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e0eefcc2bcf22e33da78b6fc58f29690
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef47d6573db6d6907f92e8a8f400c2c4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7845637ac493a99d5d23df8079e2868a |
| publicationDate |
2005-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2005294711-A |
| titleOfInvention |
Semiconductor wafer manufacturing method and semiconductor wafer manufactured by the method |
| abstract |
PROBLEM TO BE SOLVED: To reduce the amount of impurities diffused from a semiconductor wafer into an epitaxial layer inside a trench in a stepped manner, thereby changing the resistivity of the epitaxial layer inside the trench in a stepped manner, and to influence the influence of autodoping from the semiconductor wafer. Suppress. An epitaxial layer is formed by lowering the temperature stepwise in a temperature range of 400 to 1150 ° C. by vapor deposition while supplying silane gas as a source gas into a trench of a semiconductor wafer having a trench structure. The epitaxial layer 17 is filled in the trench 16 by growing. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010109892-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8956947-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008041942-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8501598-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015213102-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010056529-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9034721-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009176784-A |
| priorityDate |
2004-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |