| abstract |
PROBLEM TO BE SOLVED: To provide a diamond manufacturing method capable of separating both a diamond epitaxial film and a substrate diamond without damaging them. A step of growing a semiconductor diamond layer on a diamond substrate by a vapor phase synthesis method, a step of growing an insulating diamond layer on the diamond substrate by a vapor phase synthesis method, and electrochemical etching of the semiconductor diamond layer A method for producing diamond, comprising a step of separating the insulating diamond layer and the substrate. In addition, a step of growing insulating diamond on a diamond substrate by a vapor phase synthesis method, and a maximum value of atomic concentration of 5 × 10 18 to 2 × 10 21 atoms / cm from the surface of the insulating diamond directly above the substrate. A step of implanting ions of the atoms by an ion implantation method so as to form an implantation layer in a range of 3 , and a step of separating the substrate and the insulating diamond layer by electrical discharge machining or electrochemical etching of the implantation layer. A method for producing diamond. [Selection] Figure 1 |