http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005259911-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d78fe473c8a29219129bbc8bb50f6a59 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30 |
| filingDate | 2004-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a863030862642b3ff3e7735b87c205b |
| publicationDate | 2005-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2005259911-A |
| titleOfInvention | Method for manufacturing light emitting device |
| abstract | PROBLEM TO BE SOLVED: To provide a method for manufacturing a light emitting element, which can be easily handled even if a growth substrate is removed from a compound semiconductor layer having a light emitting layer portion. A compound semiconductor layer is epitaxially grown on a first main surface of a growth substrate, and then a temporary support substrate is bonded to the first main surface of the compound semiconductor layer through a metal temporary support bonding layer. Further, the growth substrate is removed by chemical etching or the like. After forming the bonding metal layer 31 on the second main surface of the compound semiconductor layer 50 from which the growth substrate 1 has been removed, an alloying heat treatment is first performed, and then the metal layer 10 is formed on the second main surface of the compound semiconductor layer 50. The element substrate 7 is bonded to the substrate. [Selection] Figure 3 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101147705-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-101937951-A |
| priorityDate | 2004-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.