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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F220-34
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filingDate 2004-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b05339345fa5bddcc19a0c344dd88b50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a9cb2c912352424ee44b2fdd2fa2a30d
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publicationDate 2005-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2005255704-A
titleOfInvention Polymer
abstract PROBLEM TO BE SOLVED: To provide a polymer excellent in solubility in a solvent and heat resistance and a composition thereof. It is another object of the present invention to provide a fine pattern manufacturing method using this polymer. Also provided are a polymer and a coating material for the antireflection film that are useful for adjusting the adhesion between the antireflection film applied to the substrate and the resist during the production of a semiconductor resist pattern. SOLUTION: At least one structural unit selected from the group consisting of a structural unit represented by the following formula (1) and a structural unit represented by the following formula (2-1) and the following formula (2-2). A polymer comprising [Chemical 1] (In Formula (1), R 1 represents a hydrogen atom or a methyl group. In Formula (2-1), R 21 represents a hydrogen atom or a methyl group. In Formula (2-2), R 22 represents a hydrogen atom. Or represents a methyl group.) [Selection figure] None
priorityDate 2004-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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