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filingDate 2004-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b6883d5cb00eaa3f17fc9dc4b14931f1
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publicationDate 2005-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2005239513-A
titleOfInvention Indium compound spintronic materials
abstract PROBLEM TO BE SOLVED: To provide an indium compound spintronic material capable of simultaneously controlling magnetism and electric conductivity. SOLUTION: Indium oxide includes Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, and Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, One or more elements selected from Tm and Yb are doped, and the point symmetry of the unit cell constitutes an indium compound spintronic material having a lattice translational structure of a scandium oxide type crystal structure. [Selection] Figure 1
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