http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005223097-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-41 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 |
| filingDate | 2004-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dab910e1706b8f17092225b33ce3621f |
| publicationDate | 2005-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2005223097-A |
| titleOfInvention | Manufacturing method of semiconductor device |
| abstract | A method of manufacturing a semiconductor device in which a back electrode can be appropriately formed without interruption at the edge of a through-hole even when the aspect ratio of the substrate through-hole is large. A method of manufacturing a semiconductor device according to the present invention includes (1) forming a surface electrode 5 on a surface of a substrate 1 and (2) etching the substrate 1 from a portion facing the surface electrode 5 on the back surface of the substrate 1. Thus, a through-hole 7 that penetrates the substrate 1 and reaches the surface electrode 5 is formed, (3) a sidewall titanium film 10 is formed on the sidewall of the through-hole 7, and (4) is electrically connected to the surface electrode 5 Forming a back electrode 13 to be formed on the back surface of the substrate 1 and in the through hole 7. According to the manufacturing method of the present invention, the side wall titanium film 10 with good coverage is formed on the side wall of the through hole 7 and the back electrode 13 is formed on the side wall titanium film 10. However, the back electrode 13 can be appropriately formed without interruption at the edge of the through hole. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019083925-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019083926-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019083927-A |
| priorityDate | 2004-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.