| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2004-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_388d79f2f983e6aafd28690d0766ab9f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_83a635e97e26d5017dc4c4b8a17c1dc9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e0ae01e2bc0bcab67024c29f341b739 |
| publicationDate |
2005-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2005203638-A |
| titleOfInvention |
Semiconductor film, method for forming semiconductor film, semiconductor device, and method for manufacturing the same |
| abstract |
[PROBLEMS] To provide a film forming method for directly depositing a semiconductor film including a crystal structure at a low temperature on an inexpensive large-area transparent insulating substrate. Another object is to form a semiconductor film including a crystal structure in a short processing time without increasing the number of steps. SOLUTION: The present invention introduces a silicide gas (monosilane, disilane, trisilane, etc.) and fluorine (or halogen fluoride gas) as source gases into a film formation chamber by plasma CVD, and generates plasma to generate crystals. A semiconductor film including the structure is directly formed on the substrate to be processed. [Selection] Figure 2 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8860030-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011071498-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7968879-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8343821-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8951849-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008091565-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7910929-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8030655-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008091564-A |
| priorityDate |
2004-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |