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filingDate 2004-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d036958f67006cd71f38b768ce926029
publicationDate 2005-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2005203595-A
titleOfInvention Electro-optical device manufacturing method, electro-optical device, and electronic apparatus
abstract PROBLEM TO BE SOLVED: To provide a method for manufacturing an electro-optical device capable of preventing a semiconductor substrate from being destroyed by heat treatment and improving manufacturing efficiency. By irradiating a semiconductor substrate 200 with a laser 630 having an absorption wavelength by the semiconductor substrate 200, the semiconductor substrate 200 is separated in a hydrogen ion implantation layer 205 of the semiconductor substrate 200. If the semiconductor substrate 200 is heated by laser irradiation, the semiconductor substrate 200 can be prevented from being destroyed by heat treatment. In addition, since heat generated by laser irradiation is transferred to the bonding interface between the semiconductor substrate 200 and the support substrate 500, the second heat treatment for improving the bonding strength is not necessary, and the manufacturing efficiency can be improved. it can. [Selection] Figure 2
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009049387-A
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Total number of triples: 33.