http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005202279-A

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filingDate 2004-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d24ef3d8321318cb2d85df9f383861ff
publicationDate 2005-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2005202279-A
titleOfInvention Transfer layer peeling method, thin film device device and manufacturing method thereof, active matrix substrate and manufacturing method thereof, and electro-optical device
abstract PROBLEM TO BE SOLVED: To provide a method for peeling a transferred layer with less damage to a device and enabling cost reduction, a method for manufacturing a thin film device device using the same, a thin film device device, a method for manufacturing an active matrix substrate, and active A matrix substrate and an electro-optical device are provided. SOLUTION: A step of forming a first separation layer 120 on a first base material 100, a step of forming a thin film device (140) thereon, a step of bonding a second base material 180 to the thin film device, The first separation layer 120 is irradiated with energy light, causing a peeling phenomenon in the layer or at the interface, peeling the first base material 100 from the thin film device side, and transferring the thin film device to the second base material 180 side. A method for manufacturing a thin film device device. The step of forming the first separation layer 120 includes a step of disposing a liquid material containing a silane compound on the first substrate 100, and a step of heat-treating the liquid material on the first substrate 100 to form an amorphous silicon film. And have. [Selection] Figure 4
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101272175-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013172110-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008083491-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012506568-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016171285-A1
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