http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005197757-A

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filingDate 2005-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_00eca38aa371ab8099f122355777fdb2
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publicationDate 2005-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2005197757-A
titleOfInvention Manufacturing method of semiconductor device
abstract PROBLEM TO BE SOLVED: To provide a connection device having contact terminals that can be contacted at a high density and a high density with respect to an inspection object, and a method for manufacturing the same. A hole serving as a mold for forming a contact terminal 103 is formed by anisotropic etching of a silicon wafer. Using this mold, the contact terminal 103, an insulating film 104 made of a polyimide film, and a lead-out hole are formed. A wiring 105 is formed. Further, a silicon wafer that becomes the buffer layer 108 and the substrate 109 is sandwiched between the insulating film 104 and the wiring substrate 107 to be integrated, and the mold is removed. Thereafter, the lead-out wiring 105 is connected to the electrode 110 a of the wiring substrate 107 with the solder 111. [Selection] FIG.
priorityDate 1994-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 31.