| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ae372ddaa494f2face39592b0429cc16 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28575
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-452 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45 |
| filingDate |
2004-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3d22ded1babb48931fce8ac3ab88c1e0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_822eea61cf489da852a083e49e7dd904
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81d9d8410fcf4f5370396ee0f3fa30a7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_591aff80b68df4291f4a41d036ae2a9a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ddb12388a8af86a01841fd9aebda3b5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9aab0f49d91bf0d3074187d44160a6c |
| publicationDate |
2005-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2005197687-A |
| titleOfInvention |
Low resistance electrode of compound semiconductor light emitting device and compound semiconductor light emitting device using the same |
| abstract |
PROBLEM TO BE SOLVED: To provide a low resistance electrode of a compound semiconductor light emitting device and a compound semiconductor light emitting device using the same. A low-resistance electrode stacked on a p-type semiconductor layer of a compound semiconductor light emitting device including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer is stacked on the p-type semiconductor layer to form the active layer. A reflection electrode that reflects light emitted from the layer; and an aggregation preventing electrode that is laminated on the reflection electrode to prevent the aggregation phenomenon of the reflection electrode during heat treatment. [Selection] Figure 3 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012069959-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9209254-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012227494-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008103674-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015191976-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013161247-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7982232-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007220973-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007059518-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8759868-B2 |
| priorityDate |
2004-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |