http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005191390-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c1755eede76ea7e719a3e0d2843cd793 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 |
| filingDate | 2003-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5dbdfade472d09ea09a83ce49e3c9fa8 |
| publicationDate | 2005-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2005191390-A |
| titleOfInvention | Manufacturing method of semiconductor layer |
| abstract | PROBLEM TO BE SOLVED To provide a semiconductor layer manufacturing method capable of obtaining a semiconductor layer having a high crystallization rate with respect to a substrate in order to solve the above problems. A semiconductor layer is formed on a surface of a base material after exposing the base material to plasma of nitrogen gas under a pressure near atmospheric pressure. A semiconductor layer having a high crystallization rate can be obtained by exposing the base material 90 to plasma nitrogen gas before forming the semiconductor layer on the surface of the base material 90. [Selection] Figure 1 |
| priorityDate | 2003-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.