http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005179741-A

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filingDate 2003-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2005-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2005179741-A
titleOfInvention Thin film deposition apparatus and thin film deposition method
abstract In a single wafer type thin film deposition apparatus for depositing a thin film such as endohedral fullerene in a vacuum vessel, the deposition substrates are exchanged one by one through a load lock chamber connected to a main chamber for deposition via a gate valve. I was exchanging. Therefore, it took time to evacuate and purge the load lock chamber, and the work efficiency was poor. Further, the inner wall of the vacuum vessel made of stainless steel was subjected to surface treatment by EP treatment. For this reason, there is a problem that it takes time to evacuate due to the release of moisture adsorbed inside the inner wall into the vacuum vessel. A flat plate-like support member capable of mounting a plurality of deposition substrates is attached so as to be movable at right angles to the axial direction of a main chamber. Since the deposition substrate can be exchanged by moving the support member and the load lock chamber is no longer required, the time required for evacuation and purging can be shortened, and the working efficiency has been improved. In addition, we decided to surface-treat the inner wall of the main chamber by CRP treatment. CRP-treated stainless steel does not allow moisture or gas to enter the interior, making it possible to further shorten the vacuuming time. [Selection] Figure 3
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