http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005173353-A

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filingDate 2003-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59a02c81fe6cd970bec1f4129adf8d86
publicationDate 2005-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2005173353-A
titleOfInvention Resist pattern forming method
abstract PROBLEM TO BE SOLVED: To provide a resist pattern forming method of a two-layer resist process which requires a simple development process equivalent to a single layer resist process. SOLUTION: A step (1) of forming a lower resist film 11 on a substrate 10, a step (2) of forming a diffusion preventing film 12 on the lower resist film 11, and an upper resist film 13 on the diffusion preventing film 12. A step (3) of forming the lower resist film 11 and the upper resist film 13 simultaneously, and a step (5) of developing the lower resist film 11 and the upper resist film 13 simultaneously. It is. Si as an etching resistance improving component is not included in the lower resist film 11 but is included in the upper resist film 13. The diffusion preventing film 12 has a property of preventing diffusion of Si from the upper resist film 13 to the lower resist film 11, transmitting light at the time of exposure, and removing with a developer at the time of development. [Selection] Figure 2
priorityDate 2003-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 23.