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filingDate 2003-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2005-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2005150632-A
titleOfInvention Reduction device and reduction method
abstract PROBLEM TO BE SOLVED: To realize a high yield by executing a reduction process at a low temperature. An ion supply unit 21 heats a negative ion source S containing hydride ions at a predetermined temperature. The ion supply unit 21 takes out hydride ions from the negative ion source S by applying an electric field having a predetermined strength to the negative ion source S. The ion supply unit 21 supplies the extracted hydride ions into the processing chamber 51 with an inert gas as a carrier gas, and is formed on the surface of the metal film on the semiconductor wafer W arranged in the processing chamber 51. Reduce the oxidized film. [Selection] Figure 3
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