http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005150591-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_669c01133740c5233f2c8738904ea3af |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-305 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-68 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 |
| filingDate | 2003-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5ff6a1496d90598f169c0ecb69e89b8e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef2878b03d013af71329ebe8c2ca0665 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_27ff4769da4170714d6f97abb771bcaa http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b0894df395e8203579a0abd85e1af56e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a25c808e9dc8d79bfcaee1e75a7b323d |
| publicationDate | 2005-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2005150591-A |
| titleOfInvention | Manufacturing method of charged particle beam transfer mask and charged particle beam transfer mask |
| abstract | A charged particle beam transfer mask having a stencil mask structure in which a pattern to be transferred is formed in a conductive thin film layer made of an absorber for absorbing a charged particle beam or a scatterer for scattering a charged particle beam. Improve mass productivity. (A) A conductive thin film layer 120 made of an absorber for absorbing a charged particle beam or a scatterer for scattering a charged particle beam is provided on one surface of a plate-like substrate 110 having good flatness. A thin film layer forming step to be disposed; (b) a machining step in which the pattern forming region of the base material is thinly processed from the side of the base material 110 that is not on the thin film layer 120 side; A transfer pattern forming step of forming a pattern to be transferred to the thin film layer 120 by wet etching; and (d) removing the thin portion 116 of the substrate that has been machined by wet etching to remove the base of the pattern formation region. A wet etching process is performed to penetrate the material and leave a thin film layer having a pattern formed thereon. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11281091-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10488749-B2 |
| priorityDate | 2003-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.