http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005150136-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-68 |
filingDate | 2003-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a9a8441b3742091a6533e0b909a75625 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d6b1f17660d0f4169a507ea8f38ec609 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_398389b10e9fda47cd43a1b527a2ca8a |
publicationDate | 2005-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2005150136-A |
titleOfInvention | Method for manufacturing a semiconductor device comprising a nitride compound |
abstract | In a GaN-based RHET element, it is difficult to form an electrode with a high yield while reducing a contact resistance as much as possible on a thin base layer by a method of simply forming an electrode forming portion by dry etching. The present invention relates to a transistor element having a collector layer, a base layer, and an emitter layer each having the same conductivity type, wherein the emitter-base-collector layer is made of a nitride-based semiconductor and formed on the base layer. A method of manufacturing a semiconductor device comprising: forming a base electrode after processing the base layer into a special shape by dry etching while utilizing a sidewall structure provided in a resonant tunneling diode element portion as a mask . [Selection] Figure 1 |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015062210-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101376221-B1 |
priorityDate | 2003-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069 |
Total number of triples: 15.