http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005150136-A

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Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-68
filingDate 2003-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a9a8441b3742091a6533e0b909a75625
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d6b1f17660d0f4169a507ea8f38ec609
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_398389b10e9fda47cd43a1b527a2ca8a
publicationDate 2005-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2005150136-A
titleOfInvention Method for manufacturing a semiconductor device comprising a nitride compound
abstract In a GaN-based RHET element, it is difficult to form an electrode with a high yield while reducing a contact resistance as much as possible on a thin base layer by a method of simply forming an electrode forming portion by dry etching. The present invention relates to a transistor element having a collector layer, a base layer, and an emitter layer each having the same conductivity type, wherein the emitter-base-collector layer is made of a nitride-based semiconductor and formed on the base layer. A method of manufacturing a semiconductor device comprising: forming a base electrode after processing the base layer into a special shape by dry etching while utilizing a sidewall structure provided in a resonant tunneling diode element portion as a mask . [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015062210-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101376221-B1
priorityDate 2003-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069

Total number of triples: 15.