http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005142567-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-01 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 2004-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9750354031ebb4cdebb3d086e34cb65a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_15e6740c01962375ffd2523493c03d5e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b63484dd4c734ec7c83008072aab915f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7e7ac0138d08f44292afaf0f569f5d8d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec3b68294e9bf0ec6faa5a3cfaf82909 |
| publicationDate | 2005-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2005142567-A |
| titleOfInvention | Method for forming polysilicon film, thin film transistor including polysilicon film formed by the method, and method for manufacturing the same |
| abstract | PROBLEM TO BE SOLVED: To provide a method for forming a polysilicon film, a thin film transistor provided with the polysilicon film formed by the method, and a method for manufacturing the same. A first thermal conductive film laminated on a substrate, a second thermal conductive film having a lower thermal conductivity than the first thermal conductive film laminated on the first thermal conductive film, and A polysilicon film 18 stacked on the first heat conductive film on both sides of the second heat conductive film and the second heat conductive film, and a gate stacked on the polysilicon film covering the second heat conductive film A thin film transistor including the laminates 20 and 22 and a manufacturing method thereof. The second heat conductive film may be replaced with a part of the first heat conductive film instead of being formed on the first heat conductive film. The polysilicon film is formed by irradiating the amorphous silicon film formed on the first heat conductive film and the second heat conductive film once with excimer laser light. The gate stack may be provided below the channel region portion of the polysilicon film. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012227523-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014072518-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9893196-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017152701-A |
| priorityDate | 2003-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.