http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005142453-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-91 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B53-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B53-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate | 2003-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c82ef0b38f87ead6654297a204b73105 |
| publicationDate | 2005-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2005142453-A |
| titleOfInvention | Semiconductor device manufacturing method and semiconductor device |
| abstract | PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method and a semiconductor device capable of further miniaturization. A method of manufacturing a semiconductor device according to the present invention includes a step of forming a groove 90 in an insulating film 9, a step of forming a bottom electrode material film 10 on and in the insulating film 9, and the insulating film 9. A process of forming the ferroelectric material film 11 on the lower electrode material film 10 in the upper and groove 90, and an upper electrode material film 12 on the ferroelectric material film 11 in the insulating film 9 and in the groove 90. The top surface electrode material film 12 and the ferroelectric material film 11 are removed from the top of the insulating film 9 by CMP polishing on the insulating film 9 and the groove 90, and the upper surface electrode material film 12 is formed in the groove 90. And a step of forming a capacitive element in the groove 90 by leaving the ferroelectric material film 11. [Selection] Figure 1 |
| priorityDate | 2003-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23665762 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID452575487 |
Total number of triples: 24.