http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005136403-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09F9-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09F9-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate | 2004-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aff0bb93c6b0ff0b2e00f58795979679 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d8320c11e60183fd8d9bde44a4528270 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 |
| publicationDate | 2005-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2005136403-A |
| titleOfInvention | Method for manufacturing thin film transistor |
| abstract | PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin film transistor and a method for manufacturing a semiconductor device, in which the manufacturing process is shortened and the manufacturing cost is reduced without using a peeling process. The method includes forming a mask in contact with a first conductive layer, etching the first conductive layer using the mask to form a second conductive layer, and the mask includes droplets. It is formed by a discharge method and is not further removed. Note that the first conductive layer is formed over the entire surface by a sputtering method, an evaporation method, a droplet discharge method, or the like, or formed in part by a droplet discharge method. In addition, as an essential constituent element of the present invention, an insulating layer used as a mask is formed by a droplet discharge method, but an insulating layer formed by a droplet discharge method is used as a mask as it is or a droplet is discharged. Either of the methods is employed, in which an insulating layer that has been subjected to exposure processing and development processing is used as a mask for the insulating layer formed by a discharge method. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11728437-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10861983-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008226993-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11342464-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012164876-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020005006-A |
| priorityDate | 2003-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 48.