| abstract |
PROBLEM TO BE SOLVED: To provide a method for forming an oxide film. A method for producing a bismuth-containing oxide thin film by atomic layer deposition, comprising using an organic bismuth compound having at least one silylamide ligand as a raw material for bismuth oxide. The bismuth-containing oxide thin film produced by the method of the present invention can be used, for example, as a ferroelectric material or dielectric material in an integrated circuit, and as a superconductor material. [Selection] Figure 1 |