| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4d72711e97d894c55af805c9de2053ab |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1047 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02348
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08J9-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08J9-00 |
| filingDate |
2004-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_92e7710475420c56168894017da09be8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4834bc04e7990473f73a1307916bbfbf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4515dbd30b2971c758ac2538d8985163 |
| publicationDate |
2005-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2005133060-A |
| titleOfInvention |
Porous material |
| abstract |
A porous material having a low dielectric constant in the field of manufacturing electronic devices is provided. Disposing a composition comprising a B-stage organic polysilica resin and a porogen on a substrate; and simultaneously exposing the B-stage organic polysilica resin to UV light having a wavelength of 190 nm or more, A method for providing a porous organic polysilica film, comprising heating the organic polysilica film to a temperature of 250 to 425 ° C. to form a porous organic polysilica film. [Selection figure] None |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008251774-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9074097-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013084425-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8865784-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010018776-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009215352-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4535280-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006093657-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5281206-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9340655-B2 |
| priorityDate |
2003-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |