| abstract |
PROBLEM TO BE SOLVED: To form a resist on almost the entire surface of a substrate when a contact hole is formed in a conventional semiconductor element manufacturing process, if a resist is applied and formed on a film other than the portion where the contact hole is formed. Therefore, the throughput is greatly reduced. Further, if the control of the resist application amount and the surface condition of the underlayer is insufficient, contact failure may occur, and there is a need for improvement. In forming a semiconductor element, the present invention covers a portion to be a contact hole of the semiconductor element with a first organic film having liquid repellency, and insulates the region where the film is not formed. After the second organic film functioning as a film is formed, the first organic film is removed to form a contact hole. [Selection] Figure 5 |