Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4edd4e526605dbd18b513b4b30d19ab2 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-15311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-181 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-19041 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01078 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-30107 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00014 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48465 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48237 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73265 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49833 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49816 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49827 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-498 |
filingDate |
2004-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b6cac4e8c0bc1b0cab79abac63ef6ba http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b7572fb62567d0428699a3d6e3c1616 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_858b48a81e541c5d8342083fecc23435 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_088ec23d4b0dcf6e0881472449a3d135 |
publicationDate |
2005-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2005129904-A |
titleOfInvention |
Semiconductor device and manufacturing method thereof |
abstract |
To improve heat dissipation and high frequency characteristics of a semiconductor device. A semiconductor device includes a first conductive film and a second conductive film provided on both surfaces of an insulating resin film. A circuit element 120 is placed on the second conductive film 104, and the circuit element 120 is electrically connected to the second conductive film 104. The second conductive film 104 is provided so as to cover the via plug 110. The via plug 110 is formed in a tapered shape whose diameter decreases in the direction from the first conductive film 102 to the second conductive film 104. [Selection] Figure 1 |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011228737-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010258062-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7553164-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016076594-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012084573-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8455770-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9155195-B2 |
priorityDate |
2003-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |