| abstract |
PROBLEM TO BE SOLVED: To provide a film forming composition capable of forming a film having a low relative dielectric constant and excellent chemical solution resistance. The film-forming composition of the present invention comprises (A) a compound (A-1) represented by the following general formula (1), a compound (A-2) represented by the following general formula (2), And at least one silane compound selected from the compound (A-3) represented by the following general formula (3): R a Si (OR 1 ) 4-a (1) Si (OR 2 ) 4 (2) R 3 b (R 4 O) 3-b Si- (R 7) d -Si (OR 5) 3-c R 6 c ····· (3) And (B) a cyclic silane compound represented by the following general formula (4): (4) A hydrolytic condensate (I) obtained by hydrolytic condensation of the compound, a compound (II) having a boiling point or a decomposition temperature of 200 to 400 ° C. that is compatible or dispersed in the hydrolytic condensate (I), and an organic solvent (III ) And. [Selection figure] None |