http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005109516-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2004-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_040df34c5e5a476c5ad69cf3e92727db |
| publicationDate | 2005-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2005109516-A |
| titleOfInvention | Manufacturing method of semiconductor device |
| abstract | An excellent polycrystalline thin film semiconductor device is manufactured at a relatively low temperature. A method of manufacturing a semiconductor device using a semiconductor film formed on a substrate as an active layer, wherein a deposition temperature is less than 430 ° C. and a deposition rate is 0.5 nm / min or more by a low pressure chemical vapor deposition method. A step of depositing an amorphous semiconductor film using a source gas containing higher-order silane in a state, a step of crystallizing the amorphous semiconductor film in a solid phase to form a crystalline semiconductor film, and the crystal Melting a part of the conductive semiconductor film. [Selection] Figure 2 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015062228-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014187274-A |
| priorityDate | 1998-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.